Optimization on the design of an ultra-high-power multisection tunable laser gain epilayers

Yaping Zhang; Trevor M. Benson; Christos Christopoulos

doi:10.1117/12.698106

7 February 2007 Optimization on the design of an ultra-high-power multisection tunable laser gain epilayers

Yaping Zhang, Trevor M. Benson, Christos Christopoulos

Proceedings Volume 6468, Physics and Simulation of Optoelectronic Devices XV; 64680F (2007) https://doi.org/10.1117/12.698106
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Great efforts and vast investments have been put into the research and development of widely tunable lasers in the last 25 years. Tunable lasers have become critical components in the implementation of next generation telecommunication networks and systems, to provide dynamic wavelength provision for channel restoration, reconfiguration and protection. Some stringent requirements have been imposed on tunable lasers by telecommunication applications. Consequently, ultra-high optical output power (⩾100 mW), wide tunability (tuning range ~ 40nm), narrow linewidth (< 2MHz), and side-mode suppression ratio (SMSR > 40dB) have become the main objectives for the development of the future telecommunication tunable lasers. Facet output power is the fundamental decisive factor among these targets. Original design ideas and novel approaches to the design of ultra-high power InGaAsP/InP based multisection widely-tunable laser gain section have been reported by the authors previously, mainly including: firstly, a bulk balance layer structure is placed above the InP buffer layer and below the MQWs stack, which enables a large reduction of free-carrier absorption loss by greatly shifting the optical field distribution to the intrinsic and n-doped sides. Secondly, an InP spacer layer is placed below the ridge and above the multiple quantum wells (MQWs) stack, so as to introduce extra freedom in the control of widening the single mode ridge width. This paper will focus on the optimization on the implementation of the above design ideas and approaches, regarding single mode ridge width, optical confinement in the MQWs, optical overlap with the p-doped epilayers, output power, threshold current, and slope efficiency.

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Yaping Zhang, Trevor M. Benson, and Christos Christopoulos "Optimization on the design of an ultra-high-power multisection tunable laser gain epilayers", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680F (7 February 2007); https://doi.org/10.1117/12.698106

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KEYWORDS

Tunable lasers

Quantum wells

Absorption

Etching

Refractive index

Laser applications

Optical simulations

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