Progress in etched facet technology for GaN and blue lasers

Alfred Schremer; Cristian Stagarescu; Jeff Hwang; Fareen Khaja; Vinu Vainateya; Alan Morrow; Alex Behfar

doi:10.1117/12.701425

8 February 2007 Progress in etched facet technology for GaN and blue lasers

Alfred Schremer, Cristian Stagarescu, Jeff Hwang, Fareen Khaja, Vinu Vainateya, Alan Morrow, Alex Behfar

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 64731F (2007) https://doi.org/10.1117/12.701425
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report recent progress in chemically assisted ion beam etching (CAIBE) of GaN/AlGaN materials leading to improved performance of 405nm blue lasers fabricated with etched mirrors. Using a proprietary Etched Facet Technology (EFT) designed for GaN, we have fabricated ridge lasers in conventional GaN/sapphire material. Typical 3&mgr;m ridge lasers with 600&mgr;m cavity lengths exhibit threshold currents of 150mA with high yield and cross wafer uniformity. This represents a factor of five reduction in threshold current over previous results. Additional processing (such as FIB) was not required to improve the mirror verticality and smoothness as in previous work. Continuing improvements in laser performance are anticipated with further optimization of facet smoothness, laser design, and improved epitaxial material. We are also investigating the benefits of shorter cavity lasers, made feasible by etching, to realize improvements in laser reliability and yield. The yield advantage is based on the concept that shorter cavity devices will intercept fewer defects per device. Combined with EFT advantages like low cost wafer-scale testing and monolithic integration, this is a promising approach for next generation blue lasers for optical storage applications.

Citation Download Citation

Alfred Schremer, Cristian Stagarescu, Jeff Hwang, Fareen Khaja, Vinu Vainateya, Alan Morrow, and Alex Behfar "Progress in etched facet technology for GaN and blue lasers", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731F (8 February 2007); https://doi.org/10.1117/12.701425

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