Current-transport mechanisms of isotype n-ZnO/n-GaN heterostructures

Ya. I. Alivov; X. Bo; Q. Fan; S. Akarca-Biyikli; D. Johnstone; O. Lopatiuk; L. Chernyak; C. W. Litton; H. Morkoç

doi:10.1117/12.706300

8 February 2007 Current-transport mechanisms of isotype n-ZnO/n-GaN heterostructures

Ya. I. Alivov, X. Bo, Q. Fan, S. Akarca-Biyikli, D. Johnstone, O. Lopatiuk, L. Chernyak, C. W. Litton, H. Morkoç

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 64740E (2007) https://doi.org/10.1117/12.706300
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Electrical properties of n-ZnO/n-GaN isotype heterostructures prepared by rf-sputtering of ZnO films on GaN layers which in turn grown by metal-organic vapour phase epitaxy are discussed. Current-voltage (I-V) characteristics of the n- ZnO/n-GaN diodes exhibited highly rectifying characteristics with forward and reverse currents being ~1.43x10^-2 A/cm² and ~2.4x10^-4 A/cm², respectively, at ±5 V. From the Arrhenius plot built representing the temperature dependent current-voltage characteristics (I-V-T) an activation energy 0.125 eV was derived for the reverse bias leakage current path, and 0.62 eV for the band offset from forward bias measurements. From electron-beam induced current measurements and depending on excitation conditions the minority carrier diffusion length in ZnO was estimated in the range 0.125-0.175 &mgr;m. The temperature dependent EBIC measurements yielded an activation energy of 0.462 ± 0.073 V.

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Ya. I. Alivov, X. Bo, Q. Fan, S. Akarca-Biyikli, D. Johnstone, O. Lopatiuk, L. Chernyak, C. W. Litton, and H. Morkoç "Current-transport mechanisms of isotype n-ZnO/n-GaN heterostructures", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64740E (8 February 2007); https://doi.org/10.1117/12.706300

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