Thin film growth of ZnO and its relation to substrate properties

S. Lautenschläger; C. Neumann; S. Graubner; J. Sann; F. Eylert; N. Volbers; B. K. Meyer; J. Bläsing; A. Krost; F. Bertram; J. Christen

doi:10.1117/12.713685

20 February 2007 Thin film growth of ZnO and its relation to substrate properties

S. Lautenschläger, C. Neumann, S. Graubner, J. Sann, F. Eylert, N. Volbers, B. K. Meyer, J. Bläsing, A. Krost, F. Bertram, J. Christen

Author Affiliations +

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 64740H (2007) https://doi.org/10.1117/12.713685
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report on the hetero- and homoepitaxial growth of ZnO thin films by the chemical vapor deposition technique. We compare the results obtained on sapphire substrates, on GaN-templates on sapphire substrates and on silicon (111) substrates. Even under optimized growth conditions with the insertion of buffer layers the films tend to grow 3-dimensionally. However, also ZnO substrates, expected to be the best choice, need to be prepared before being used in the epitaxial growth. After mechanical polishing of the ZnO substrates we employed a high temperature annealing step which produced atomically flat surfaces and removed all of the surface and subsurface damage. Thereafter, the two dimensional epitaxial growth was achieved without an additional buffer layer. The substrate had a rocking curve full width at half maximum of 27" which can be compared with that of the film of 22". The films had superior band edge luminescence as compared to the substrate for which the green luminescence band was dominating.

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S. Lautenschläger, C. Neumann, S. Graubner, J. Sann, F. Eylert, N. Volbers, B. K. Meyer, J. Bläsing, A. Krost, F. Bertram, and J. Christen "Thin film growth of ZnO and its relation to substrate properties", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64740H (20 February 2007); https://doi.org/10.1117/12.713685

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