Paper
6 February 2007 Active transmission control based on photonic-crystal MOS capacitor
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Abstract
Silicon nanophotonics has recently attracted great attention since it offers an opportunity for low cost opto-electronic solutions based on silicon complementary metal oxide semiconductor (MOS) technology. Photonic crystal (PhC) structures with slow photon effect are expected to play a key role in future large-scale ultra-compact photonic integrated circuits. A novel vertical-MOS-capacitor-based silicon PhC waveguide structure was proposed to achieve active transmission control via the free carrier plasma dispersion effect. We designed and fabricated a single-arm PhC waveguide with MOS gate defect using silicon-on-insulator (SOI) substrate and demonstrated that a defect mode was present in the infrared region. Plane wave expansion (PWE) method based simulation indicated that high group index of the fabricated PhC waveguide could be achieved near the transmission band edge. Further investigation demonstrated that such PhC MOS capacitor would be a good candidate to realize ultra-compact transmission control.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaonan Chen, Lanlan Gu, Wei Jiang, and Ray T. Chen "Active transmission control based on photonic-crystal MOS capacitor", Proc. SPIE 6480, Photonic Crystal Materials and Devices VI, 64800W (6 February 2007); https://doi.org/10.1117/12.705613
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CITATIONS
Cited by 11 patents.
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KEYWORDS
Molybdenum

Silicon

Waveguides

Photonic crystals

Capacitors

Dispersion

Oxides

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