High-throughput polarization imaging for defocus and dose inspection for production wafers

Gang Sun; Eugene Onoichenco; Yonghuang Fu; Yongqiang Liu; Ricardo Amell; Casey McCandless; Rajasekar Reddy; Gidesh Kumar; Max Guest

doi:10.1117/12.712381

5 April 2007 High-throughput polarization imaging for defocus and dose inspection for production wafers

Gang Sun, Eugene Onoichenco, Yonghuang Fu, Yongqiang Liu, Ricardo Amell, Casey McCandless, Rajasekar Reddy, Gidesh Kumar, Max Guest

Author Affiliations +

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65182M (2007) https://doi.org/10.1117/12.712381
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Advances in lithography create a unique challenge for process window control with defects inspection tools. As the technology moves towards smaller line widths and more complicated structures, the sensitivity requirements for some process defects become higher, such as defocus and dose defects at 50nm or lower technology nodes. Currently automated macro inspection tools are used to detect a wide range of macro defects in the litho area, such as coating defects, particles, scratches, as well as the process defects. Most tools, however, cannot satisfy the new sensitivity requirements for the process defects while maintaining their current inspection capability for other defects. Rudolph Technologies approaches this challenge by integrating a unique polarization-imaging configuration, which enhances detection of defocus and dose defects without sacrificing the existing capability to detect other types of macro defects. The improved inspection system has demonstrated high sensitivity for defocus and dose defects on production wafers at multiple process nodes at high throughput.

Citation Download Citation

Gang Sun, Eugene Onoichenco, Yonghuang Fu, Yongqiang Liu, Ricardo Amell, Casey McCandless, Rajasekar Reddy, Gidesh Kumar, and Max Guest "High-throughput polarization imaging for defocus and dose inspection for production wafers", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65182M (5 April 2007); https://doi.org/10.1117/12.712381

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