Photovoltaic Characteristics Of Thin Films Of Cu2SnS3

Titilayo A, Kuku; Olaosebikan A Fakolujo

doi:10.1117/12.938349

24 September 1986 Photovoltaic Characteristics Of Thin Films Of Cu2SnS3

Titilayo A, Kuku, Olaosebikan A Fakolujo

Proceedings Volume 0653, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion V; (1986) https://doi.org/10.1117/12.938349
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

We report for the first time the optical absorption and photovoltaic characteristics of thin films of Cu2SnS3,. Films obtained by the direct evaporation of the synthesised compound were observed to be deficient in copper, while those grown in an atmosphere of copper vapour were observed to be more stoichiometric. Both sets of films are characterised by indirect and direct absorption edge properties. The indirect absorption edges are at 1.O65 and 1.5O0 eV, while the direct band edges are at 1.658 and 1.770 eV for the copper deficient and stoichiometric films respectively. The stoichiometric film is characterised by p-type semiconducting properties while schottky type solar cell developed from it is observed to have promising photovoltaic characteristics.

Citation Download Citation

Titilayo A, Kuku and Olaosebikan A Fakolujo "Photovoltaic Characteristics Of Thin Films Of Cu2SnS3", Proc. SPIE 0653, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion V, (24 September 1986); https://doi.org/10.1117/12.938349

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