Paper
11 January 2007 Photodetectors for fast images recognition on structures with Shottky barriers
P. G. Kasherininov, A. V. Kichaev, A. A. Tomasov, V. K. Sokolov
Author Affiliations +
Proceedings Volume 6594, Lasers for Measurements and Information Transfer 2006; 65941G (2007) https://doi.org/10.1117/12.725689
Event: Lasers for Measurements and Information Transfer 2006, 2006, St. Petersburg, Russian Federation
Abstract
The paper proposes semiconducting photodetectors for fast images recognition. Photodetector is illuminated simultaneously with two beams of "intrinsic" light. One of the beams carries image of the reference object the other provides image of the current object. While the images are identical the photoresponse turns to be maximum. Photodetector represents itself a processor which multiplies the the corresponding elements of these images and integrates the result over the square. Photodetector is a plane-parallel plate of crystal with high resistance (GaAs, CdTe) with a photosensitive n - p junction at one side and Shottky barrier (optical detecting medium) at the other one.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. G. Kasherininov, A. V. Kichaev, A. A. Tomasov, and V. K. Sokolov "Photodetectors for fast images recognition on structures with Shottky barriers", Proc. SPIE 6594, Lasers for Measurements and Information Transfer 2006, 65941G (11 January 2007); https://doi.org/10.1117/12.725689
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Cited by 3 scholarly publications.
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KEYWORDS
Crystals

Photodetectors

Oxides

Switching

Gallium arsenide

Dielectrics

Semiconductors

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