Paper
5 March 2007 Characterization of vanadium doped ZnO films produced by pulsed laser deposition
M. E. Koleva, P. A. Atanasov, J. Perriere, D. Tzankov
Author Affiliations +
Proceedings Volume 6604, 14th International School on Quantum Electronics: Laser Physics and Applications; 660415 (2007) https://doi.org/10.1117/12.727098
Event: 14th International School on Quantum Electronics: Laser Physics and Applications, 2006, Sunny Beach, Bulgaria
Abstract
The aim of our work was to produce and investigate vanadium doped ZnO thin films with potential application in spintronic technology. Thin films with different concentration of V (2, 3, 5 and 7 at.%) were deposited by using the pulsed laser deposition (PLD) technique. The distribution of vanadium in the films and the variation of its content during laser deposition was determined by Rutherford backscattering spectroscopy (RBS). We also present a comparative study of the structural and electrical properties of 2 at.% V:ZnO films deposited on sapphire substrates with different orientations.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. E. Koleva, P. A. Atanasov, J. Perriere, and D. Tzankov "Characterization of vanadium doped ZnO films produced by pulsed laser deposition", Proc. SPIE 6604, 14th International School on Quantum Electronics: Laser Physics and Applications, 660415 (5 March 2007); https://doi.org/10.1117/12.727098
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KEYWORDS
Vanadium

Zinc oxide

Sapphire

Zinc

Aluminum

Pulsed laser deposition

Magnetism

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