Effects of impurities with deep energy level in high biased field on delay time of semi-insulating GaAs photoconductive switches

Huiying Dai; Wei Shi; Junyan Hou

doi:10.1117/12.790934

3 March 2008 Effects of impurities with deep energy level in high biased field on delay time of semi-insulating GaAs photoconductive switches

Huiying Dai, Wei Shi, Junyan Hou

Author Affiliations +

Proceedings Volume 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection; 66211Q (2008) https://doi.org/10.1117/12.790934
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China

Abstract

This paper discussed the SI-GaAs photoconductive switch entering into the nonlinear mode under the high biased field and the result of photovoltaic delay, as well as, analyzed the phenomena of electric pulses delay under the high biased field. Meanwhile, pose a theory that the captive effects of impurities in deep energy level of semi-conductor materials is the main reason of photovoltaic delay, moreover, calculation to account the relationship between the transmission of charge domain and photovoltaic delay, and received a result that inosculate with the experiment.

Citation Download Citation

Huiying Dai, Wei Shi, and Junyan Hou "Effects of impurities with deep energy level in high biased field on delay time of semi-insulating GaAs photoconductive switches", Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 66211Q (3 March 2008); https://doi.org/10.1117/12.790934

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