Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection

A. Fred Semendy; Satpal Singh; Mark Litz; Priyalal Wijewarnasuriya; Kara Blaine; Nibir Dhar

doi:10.1117/12.732121

18 September 2007 Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection

A. Fred Semendy, Satpal Singh, Mark Litz, Priyalal Wijewarnasuriya, Kara Blaine, Nibir Dhar

Proceedings Volume 6703, Ultrafast X-Ray Sources and Detectors; 67030N (2007) https://doi.org/10.1117/12.732121
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

We have studied the current voltage and X-ray detection using front and back side processed, unintentionally doped bulk GaAs Schottky detectors. GaAs detectors with large enough thickness and low enough doping could be used for X-ray imaging, especially for medical applications. GaAs Schottky detectors were fabricated using front and back side photolithographic processing with Ti/Au for Schottky and Ge/Au/Ni/Au for Ohmic contacts. A number of detectors of size 2 mm² were tested. The breakdown voltage reached 600- 800 V in semi insulated (SI) GaAs Schottky front and back side processed detectors. For these detectors the dark current was found to be between 2- 90 nA. These detectors were also characterized with 150 keV, 3mA X-ray radiation and they responded well by showing more than a hundred fold increase in photocurrent due to production of electron hole pairs by the ionization processes. The processing of the detectors and the I-V and X-ray characterization is presented in this report.

Citation Download Citation

A. Fred Semendy, Satpal Singh, Mark Litz, Priyalal Wijewarnasuriya, Kara Blaine, and Nibir Dhar "Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection", Proc. SPIE 6703, Ultrafast X-Ray Sources and Detectors, 67030N (18 September 2007); https://doi.org/10.1117/12.732121

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