Room temperature GaN-GaAs direct bonding by argon-beam surface activation

Eiji Higurashi; Yuichiro Tokuda; Masatake Akaike; Tadatomo Suga

doi:10.1117/12.754402

10 October 2007 Room temperature GaN-GaAs direct bonding by argon-beam surface activation

Eiji Higurashi, Yuichiro Tokuda, Masatake Akaike, Tadatomo Suga

Proceedings Volume 6717, Optomechatronic Micro/Nano Devices and Components III; 67170L (2007) https://doi.org/10.1117/12.754402
Event: International Symposium on Optomechatronic Technologies, 2007, Lausanne, Switzerland

Abstract

A room temperature direct bonding using surface activation by argon (Ar)-beam sputtering was applied to the bonding between gallium nitride (GaN) and gallium arsenide (GaAs). The silicon doped n-type GaN films used in this experiment were grown by metal organic chemical vapor deposition on (0001) sapphire substrates. The GaN film thickness is 3 μm with a surface roughness of approximately 0.22 nm (R_a) as measured by atomic force microscopy. The silicon doped n-type GaAs (100) wafers with a surface roughness of approximately 0.34 nm (R_a) were used as GaAs substrates. The GaN and GaAs samples were cleaned by sputtering with a 1.5 keV Ar-fast atom beam with 15 mA in the vacuum chamber (background pressure: 1.3×10^-5~4.0×10^-4 Pa). Then, the samples were brought into contact as quickly as possible with a load of 735 N at room temperature. After this process, GaN films were successfully bonded to GaAs substrates without any heat treatment. Cross-sectional scanning electron microscopy showed that most of the interface area was well bonded. The bonding strength was evaluated by die-shear tests. Although all samples were visibly separated from the interface rather than in the bulk region after die-shear tests, the estimated die-shear strength of GaN/GaAs structures was 1.5 -7 MPa. The advantage of our process is free from the various problems caused by the large thermal expansion mismatch during heat treatment in the conventional fusion bonding.

Citation Download Citation

Eiji Higurashi, Yuichiro Tokuda, Masatake Akaike, and Tadatomo Suga "Room temperature GaN-GaAs direct bonding by argon-beam surface activation", Proc. SPIE 6717, Optomechatronic Micro/Nano Devices and Components III, 67170L (10 October 2007); https://doi.org/10.1117/12.754402

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