Raman Characterization Of Molecular Bonding And Phase Homogeneity In Thin Optical Films

Gregory J Exarhos

doi:10.1117/12.939538

23 December 1986 Raman Characterization Of Molecular Bonding And Phase Homogeneity In Thin Optical Films

Gregory J Exarhos

Proceedings Volume 0678, Optical Thin Films II: New Developments; (1986) https://doi.org/10.1117/12.939538
Event: 30th Annual Technical Symposium, 1986, San Diego, United States

Abstract

Submicrometer dielectric films have been analyzed by Raman spectroscopic techniques with respect to phase composition and homogeneity. Residual film stress has also been evaluated from measured vibrational band shifts in sol-gel as well as sputter-deposited films using available data from bulk studies of the pressure dependence on Raman frequencies. Dynamic studies of temperature and laser-induced phase transformations have been performed in situ, suggesting the applicability of this technique for film analysis during deposition. The potential advantages and limitations associated with Raman characterization of thin dielectric films will be addressed in this review using examples from current research in this area.

Citation Download Citation

Gregory J Exarhos "Raman Characterization Of Molecular Bonding And Phase Homogeneity In Thin Optical Films", Proc. SPIE 0678, Optical Thin Films II: New Developments, (23 December 1986); https://doi.org/10.1117/12.939538

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