Paper
19 November 2007 Loss-reduced semiconductor ring lasers based on active vertical coupler structure and two-section rectangular cavity
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820P (2007) https://doi.org/10.1117/12.745234
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
InGaAsP/InP rectangular ring lasers based on active vertical coupler structure are demonstrated in terms of loss-reduction. Varied thresholds for different configuration devices with different coupling current have been measured. The smallest threshold current of 75mA has been achieved in the device with the coupler length of 300μm and coupling current of 30mA. Such variation has also been calculated assuming different fabrication loss. Their loss mechanisms have been investigated based on threshold analysis, which should benefit to further optimize loss-reduced semiconductor polygon ring lasers based on active vertical coupler structure.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Zhang, O. Ansell, Z. Ren, and S. Yu "Loss-reduced semiconductor ring lasers based on active vertical coupler structure and two-section rectangular cavity", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820P (19 November 2007); https://doi.org/10.1117/12.745234
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KEYWORDS
Waveguides

Semiconductor lasers

Etching

Laser damage threshold

Semiconductors

Reflectivity

Sensors

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