High power vertical cavity surface-emitting laser with high reliability

Changling Yan; Guoguang Lu; Chunfeng He; Li Qin

doi:10.1117/12.743597

19 November 2007 High power vertical cavity surface-emitting laser with high reliability

Changling Yan, Guoguang Lu, Chunfeng He, Li Qin

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 678224 (2007) https://doi.org/10.1117/12.743597
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology, the devices have been fabricated in experiment, and the characteristics of the device are carried out at room temperature. The 300μm-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W, and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-μm diameter lasers shows that the average lifetime is about 1800h at 80°C. The device degradation mechanism is also discussed in detail.

Citation Download Citation

Changling Yan, Guoguang Lu, Chunfeng He, and Li Qin "High power vertical cavity surface-emitting laser with high reliability", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678224 (19 November 2007); https://doi.org/10.1117/12.743597

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