Paper
19 November 2007 Picosecond pulse Raman amplification and controlled time delay in silicon-on-insulator waveguides
Jianwei Wu, Fengguang Luo, Mingcui Cao, Qingtang Zhang, Yongjung Huang
Author Affiliations +
Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67822F (2007) https://doi.org/10.1117/12.740074
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
The stimulated Raman amplification of picosecond Stokes pulse is numerically investigated in ultra-small silicon-on-insulator optical waveguide. Numerical results show that we obtain the gain of up to 30-dB for weak Stokes pulse in the co-propagation configuration for 10-mm-longth waveguide using high intensity pump optical pulse. The peak gain, pulse width, rise time, and fall time of Stokes pulse will experience the variation course of decaying then increasing with increasing waveguide length. The time delay of output Stokes pulse is controlled by adjusting the initial time delay of both pump and Stokes pulses.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianwei Wu, Fengguang Luo, Mingcui Cao, Qingtang Zhang, and Yongjung Huang "Picosecond pulse Raman amplification and controlled time delay in silicon-on-insulator waveguides", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822F (19 November 2007); https://doi.org/10.1117/12.740074
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KEYWORDS
Waveguides

Absorption

Silicon

Raman spectroscopy

Picosecond phenomena

Raman scattering

Optoelectronics

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