Terahertz wave switch using high-resistivity silicon

Jiu-sheng Li; Hai-bo Qiu; Ying Zheng; Yuan-yuan Zhuang

doi:10.1117/12.756088

4 January 2008 Terahertz wave switch using high-resistivity silicon

Jiu-sheng Li, Hai-bo Qiu, Ying Zheng, Yuan-yuan Zhuang

Proceedings Volume 6840, Terahertz Photonics; 68401D (2008) https://doi.org/10.1117/12.756088
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

In this letter, a new type of optically controllable, terahertz wave switch using high resistivity silicon wafer is developed. A high resistivity silicon is a lossless dielectric material at terahertz wave without optical excitation. When a silicon wafer is optically excited, free carriers are generated, and the silicon wafer becomes a lossy dielectric. We study theoretically and demonstrate experimentally light controllable terahertz wave of the high resistivity silicon wafers. The results show that a more than 15dB attenuation of the novel device is obtained at frequency of 0.3THz. The proposed structure is useful for developing low cost switch in the terahertz wave region.

Citation Download Citation

Jiu-sheng Li, Hai-bo Qiu, Ying Zheng, and Yuan-yuan Zhuang "Terahertz wave switch using high-resistivity silicon", Proc. SPIE 6840, Terahertz Photonics, 68401D (4 January 2008); https://doi.org/10.1117/12.756088

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