Investigation on time-resolved photoluminescence of InGaN single quantum well structure grown by metalorganic chemical vapor deposition

Jinshe Yuan; Mingyue Wang; Guohao Yu

doi:10.1117/12.757818

4 January 2008 Investigation on time-resolved photoluminescence of InGaN single quantum well structure grown by metalorganic chemical vapor deposition

Jinshe Yuan, Mingyue Wang, Guohao Yu

Author Affiliations +

Proceedings Volume 6841, Solid State Lighting and Solar Energy Technologies; 68411M (2008) https://doi.org/10.1117/12.757818
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

The time-resolved photoluminescence spectra were investigated on the basis of transmission, reflection and photoluminescence studies of the InGaN single quantum well structure grown by metalorganic chemical vapor deposition. It was found that the temporal responses of photoluminescence decay exhibited exponential function. The multi-peak structure of the photoluminescence spectra was attributed to the Fabry-Perot interference effect in the GaN/InGaN/GaN vertical cavity.

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Jinshe Yuan, Mingyue Wang, and Guohao Yu "Investigation on time-resolved photoluminescence of InGaN single quantum well structure grown by metalorganic chemical vapor deposition", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68411M (4 January 2008); https://doi.org/10.1117/12.757818

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