Paper
10 December 1986 CCD's for High Resolution Imaging in the Near and Far UV
J. T. Bosiers, N. S. Saks, D. McCarthy, M. C. Peckerar, D. J. Michels
Author Affiliations +
Abstract
This paper describes the development of backside illuminated, deep-depletion charge coupled devices (CCD's) optimized for imaging in the ultraviolet. A model is presented to describe the UV detection process at the CCD backside, and the factors controlling the UV quantum efficiency. A 32 x 32-pixel area imager was obtained with excellent operating characteristics, such as high transport efficiency and low readout rwise. By appropriate treatments of the CCD backside, a quantum efficiency of 20% at 1216 Å was obtained on the best devices. Good resolution was obtained in the visible and UV regions of the spectrum.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. T. Bosiers, N. S. Saks, D. McCarthy, M. C. Peckerar, and D. J. Michels "CCD's for High Resolution Imaging in the Near and Far UV", Proc. SPIE 0687, Ultraviolet Technology, (10 December 1986); https://doi.org/10.1117/12.936551
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KEYWORDS
Charge-coupled devices

Ultraviolet radiation

Quantum efficiency

Oxides

Semiconducting wafers

Silicon

Absorption

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