Ion implantion in silicon waveguides for nonlinear effective length enhancement and power monitoring applications

H. K. Tsang; Y. Liu

doi:10.1117/12.761596

13 February 2008 Ion implantion in silicon waveguides for nonlinear effective length enhancement and power monitoring applications

H. K. Tsang, Y. Liu

Author Affiliations +

Proceedings Volume 6898, Silicon Photonics III; 689814 (2008) https://doi.org/10.1117/12.761596
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We review recent work on low-dose high-energy helium ion implantation into silicon-on-insulator (SOI) optical waveguides. The important role of free carriers generated by two-photon absorption (TPA) in nonlinear silicon waveguide devices is discussed and a generalized definition of the nonlinear effective length which takes into account the presence of nonlinear losses is proposed. We describe experimental studies and simulations of helium ion implantation for carrier lifetime reduction to increase the nonlinear effective lengths of silicon waveguides. Helium ion implantation can also enhance the photodetection responsivity of silicon at below-bandgap wavelengths. We review our work on a possible application of the helium ion implanted waveguides for in-line optical power monitors (ICPM) which monitor the output from erbium doped fiber amplifiers (EDFA) and, when combined with silicon variable optical attenuators, can perform EDFA gain tilt and gain transient compensation.

Citation Download Citation

H. K. Tsang and Y. Liu "Ion implantion in silicon waveguides for nonlinear effective length enhancement and power monitoring applications", Proc. SPIE 6898, Silicon Photonics III, 689814 (13 February 2008); https://doi.org/10.1117/12.761596

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