Singlemode 1.1 µm InGaAs quantum well microstructured photonic crystal VCSEL

Renaud Stevens; Philippe Gilet; Alexandre Larrue; Laurent Grenouillet; Nicolas Olivier; Philippe Grosse; Karen Gilbert; Raphael Teysseyre; Alexei Chelnokov

doi:10.1117/12.760052

1 February 2008 Singlemode 1.1 μm InGaAs quantum well microstructured photonic crystal VCSEL

Renaud Stevens, Philippe Gilet, Alexandre Larrue, Laurent Grenouillet, Nicolas Olivier, Philippe Grosse, Karen Gilbert, Raphael Teysseyre, Alexei Chelnokov

Author Affiliations +

Proceedings Volume 6908, Vertical-Cavity Surface-Emitting Lasers XII; 69080D (2008) https://doi.org/10.1117/12.760052
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

In this article, we present our results on long wavelength (1.1 μm) single-mode micro-structured photonic crystal strained InGaAs quantum wells VCSELs for optical interconnection applications. Single fundamental mode roomtemperature continuous-wave lasing operation was demonstrated for devices designed and processed with a number of different two-dimensional etched patterns. The conventional epitaxial structure was grown by Molecular Beam Epitaxy (MBE) and contains fully doped GaAs/AlGaAs DBRs, one oxidation layer and three strained InGaAs quantum wells. The holes were etched half-way through the top-mirror following various designs (triangular and square lattices) and with varying hole's diameters and pitches. At room temperature and in continuous wave operation, micro-structured 50 µm diameter mesa VCSELs with 10 μm oxidation aperture exhibited more than 1 mW optical power, 2 to 5 mA threshold currents and more than 30 dB side mode suppression ratio at a wavelength of 1090 nm. These structures show slight power reduction but similar electrical performances than unstructured devices. Systematic static electrical, optical and spectral characterization was performed on wafer using an automated probe station. Numerical modeling using the MIT Photonic-Bands (MPB [1]) package of the transverse modal behaviors in the photonic crystal was performed using the plane wave method in order to understand the index-guiding effects of the chosen patterns, and to further optimize the design structures for mode selection at extended wavelength range.

Citation Download Citation

Renaud Stevens, Philippe Gilet, Alexandre Larrue, Laurent Grenouillet, Nicolas Olivier, Philippe Grosse, Karen Gilbert, Raphael Teysseyre, and Alexei Chelnokov "Singlemode 1.1 μm InGaAs quantum well microstructured photonic crystal VCSEL", Proc. SPIE 6908, Vertical-Cavity Surface-Emitting Lasers XII, 69080D (1 February 2008); https://doi.org/10.1117/12.760052

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available