Paper
26 March 2008 Canon's development status of EUVL technologies
Shigeyuki Uzawa, Hiroyoshi Kubo, Yoshinori Miwa, Toshihiko Tsuji, Hideki Morishima, Kazuhiko Kajiyama, Takayuki Hasegawa
Author Affiliations +
Abstract
We developed a small field exposure tool (SFET) in collaboration with EUVA (Extreme Ultraviolet Lithography System Development Association). SFET was installed at SELETE (Semiconductor Leading Edge Technologies; Japanese Consortium) in 2006. SFET is positioned as a cornerstone of the manufacturing technologies for EUVL Full- Field tools as well as tool for resist and mask development. We started the system design of the Full-Field tool and fabrication of the six-mirror projection optics based on the experience of the SFET. In this paper, we introduce the outline of Canon's activities for the full-field tool. EUVL is requested to resolve the sub 30 nm features. The studies of the resolution for higher NA EUV projection optics is also presented.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeyuki Uzawa, Hiroyoshi Kubo, Yoshinori Miwa, Toshihiko Tsuji, Hideki Morishima, Kazuhiko Kajiyama, and Takayuki Hasegawa "Canon's development status of EUVL technologies", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69210N (26 March 2008); https://doi.org/10.1117/12.769894
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Cited by 8 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Extreme ultraviolet lithography

Carbon

Photomasks

Particles

Projection systems

Contamination

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