Focus and dose control to actual process wafer

Hideki Ina; Koichi Sentoku

doi:10.1117/12.768893

22 March 2008 Focus and dose control to actual process wafer

Hideki Ina, Koichi Sentoku

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 692212 (2008) https://doi.org/10.1117/12.768893
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

We have proposed a new inspection method of in-line focus and dose controls for semiconductor volume production. We referred to this method as the focus and dose line navigator (FDLN). Using FDLN, the deviations from the optimum focus and exposure dose can be obtained by measuring the topography of the resist pattern on a process wafer that was made under a single-exposure condition. Generally speaking, FDLN belongs to the technology of solving the inverse problem as scatterometry. The FDLN sequence involves following the two steps. Step 1:creating a focus exposure matrix (FEM) using a test wafer for building the model as supervised data. The model means the relational equation between the multi measurement results of resist patterns ( e.g. Critical dimension (CD), height, sidewall angle) and FEM's exposure conditions. Step 2: measuring the resist patterns on a production wafers and feeding the measurement data into the library to extrapolate focus and dose. In this time, we have evaluated the estimated accuracy of Focus and dose for actual process wafer using the advanced CD-SEM and we also have developed new algorithm for considering against thermal dose error.

Citation Download Citation

Hideki Ina and Koichi Sentoku "Focus and dose control to actual process wafer", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 692212 (22 March 2008); https://doi.org/10.1117/12.768893

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