GaSb/InAsSb heterostructure MWIR detector for high temperature operation

Y. Sharabani; Y. Paltiel; A. Sher; A. Raizman; A. Zussman

doi:10.1117/12.777339

15 April 2008 GaSb/InAsSb heterostructure MWIR detector for high temperature operation

Y. Sharabani, Y. Paltiel, A. Sher, A. Raizman, A. Zussman

Proceedings Volume 6940, Infrared Technology and Applications XXXIV; 69400D (2008) https://doi.org/10.1117/12.777339
Event: SPIE Defense and Security Symposium, 2008, Orlando, Florida, United States

Abstract

InAsSb is a promising material for high operating temperature MWIR detectors. InAsSb p-n junction detectors dark current is g-r limited in the lower temperature range and diffusion limited in the higher ones. In this work we have investigated the properties GaSb / InAs_0.91Sb_0.09 heterostructure and its performance as a sensitive MWIR photodetector. The heterostructure was obtained by MOCVD growth of lattice matched, unintentionally doped layer of InAsSb on NGaSb substrate. This rectifying N-n heterostructure has the unique type II broken gap interface. I-V and spectral response were measured at various temperatures in the range 20-300 K. The BLIP temperature was found to be 180 K. R₀A product of 2.5 and 180 Ω•cm² were measured at 300 and 180 K, respectively. Dual color detection was demonstrated. The range of spectral response, due to light absorption in GaSb or in InAsSb can be determined by the applied bias. An optical gain larger than one was observed at temperatures below 120 K. High detectivity values of 1.3•10¹⁰ and 4.9•10⁹cm•Hz^1/2W^-1 at 180 and 300 K respectively were measured.

Citation Download Citation

Y. Sharabani, Y. Paltiel, A. Sher, A. Raizman, and A. Zussman "GaSb/InAsSb heterostructure MWIR detector for high temperature operation", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69400D (15 April 2008); https://doi.org/10.1117/12.777339

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