Paper
11 March 2008 Preparation of polycrystalline HgI2 films by PVD method under ultrasonic wave
Yaoming Zheng, Weimin Shi, Guangpu Wei, Juan Qin, Sheng Chen, Linjun Wang, Yiben Xia
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842Y (2008) https://doi.org/10.1117/12.792378
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Highly oriented polycrystalline α-HgI2 thick films are fabricated by physical vapor deposition method under the conditions of 59KHz ultrasonic wave and relatively lower source temperature of 80°C. The ultrasonic wave is used in the process of physical vapor deposition films preparation for the first time. With the effect of ultrasonic wave, the film quality and the growth rate can be obviously improved. The growth mechanism as well as impacts of ultrasonic wave is also discussed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yaoming Zheng, Weimin Shi, Guangpu Wei, Juan Qin, Sheng Chen, Linjun Wang, and Yiben Xia "Preparation of polycrystalline HgI2 films by PVD method under ultrasonic wave", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842Y (11 March 2008); https://doi.org/10.1117/12.792378
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Cited by 2 scholarly publications.
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KEYWORDS
Ultrasonics

Molecules

Physical vapor deposition

Crystals

Scanning electron microscopy

Thin films

Diffusion

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