Ultrafast dynamic ellipsometry of laser ablated silicon

C. A. Bolme; S. D. McGrane; D. S. Moore; D. J. Funk

doi:10.1117/12.782739

12 May 2008 Ultrafast dynamic ellipsometry of laser ablated silicon

C. A. Bolme, S. D. McGrane, D. S. Moore, D. J. Funk

Proceedings Volume 7005, High-Power Laser Ablation VII; 70050M (2008) https://doi.org/10.1117/12.782739
Event: High-Power Laser Ablation 2008, 2008, Taos, New Mexico, United States

Abstract

Ultrafast dynamic ellipsometry, a technique that probes a sample with chirped laser pulses at two angles and with two orthogonal polarizations, was used to measure the effective refractive index across the ablation region of a Si(111) wafer exposed to a 100 fs ablation pulse. The resulting refractive index data show a significant increase in the extinction coefficient, indicative of the melting of silicon.

Citation Download Citation

C. A. Bolme, S. D. McGrane, D. S. Moore, and D. J. Funk "Ultrafast dynamic ellipsometry of laser ablated silicon", Proc. SPIE 7005, High-Power Laser Ablation VII, 70050M (12 May 2008); https://doi.org/10.1117/12.782739

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