Photomask technology for 32nm node and beyond

Ryugo Hikichi; Hiroyuki Ishii; Hidekazu Migita; Noriko Kakehi; Mochihiro Shimizu; Hideyoshi Takamizawa; Tsugumi Nagano; Masahiro Hashimoto; Hiroyuki Iwashita; Toshiyuki Suzuki; Morio Hosoya; Yasushi Ohkubo; Masao Ushida; Hideaki Mitsui

doi:10.1117/12.793014

19 May 2008 Photomask technology for 32nm node and beyond

Ryugo Hikichi, Hiroyuki Ishii, Hidekazu Migita, Noriko Kakehi, Mochihiro Shimizu, Hideyoshi Takamizawa, Tsugumi Nagano, Masahiro Hashimoto, Hiroyuki Iwashita, Toshiyuki Suzuki, Morio Hosoya, Yasushi Ohkubo, Masao Ushida, Hideaki Mitsui

Author Affiliations +

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 702805 (2008) https://doi.org/10.1117/12.793014
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

193nm-immersion lithography is the most promising technology for 32nm-node device fabrication. At the 32nm technology-node, the performance of photomasks, not only phase-shift masks but also binary masks, needs to be improved, especially in "resolution" and "CD accuracy". To meet sub-100nm resolution with high precision, further thinning of resist thickness will be needed. To improve CD performance, we have designed a new Cr-on-glass (COG) blank for binary applications, having OD-3 at 193nm. This simple Cr structure can obtain superior performance with the conventional mask-making process. Since the hardmask concept is one of the alternative solutions, we have also designed a multilayered binary blank. The new COG blank (NTARC) was fully dry-etched with over 25% shorter etching time than NTAR7, which is a conventional COG blank. Thinner resist (up to 200nm) was possible for NTARC. NTARC with 200nm-thick resist showed superior resolution and CD linearity in all pattern categories. On the other hand, the multilayered binary stack gives us a wide etching margin for several etching steps. Super thin resist (up to 100nm) was suitable by using a Cr-hardmask on a MoSi-absorber structure (COMS). The COMS blanks showed superior performance, especially in tiny clear patterns, such as the isolated hole pattern. We confirmed that these new photomask blanks, NTARC and COMS, will meet the requirements for 32nm-node and beyond, for all aspects of mask-making.

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Ryugo Hikichi, Hiroyuki Ishii, Hidekazu Migita, Noriko Kakehi, Mochihiro Shimizu, Hideyoshi Takamizawa, Tsugumi Nagano, Masahiro Hashimoto, Hiroyuki Iwashita, Toshiyuki Suzuki, Morio Hosoya, Yasushi Ohkubo, Masao Ushida, and Hideaki Mitsui "Photomask technology for 32nm node and beyond", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702805 (19 May 2008); https://doi.org/10.1117/12.793014

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