Investigation of the electronic, linear, and second-order nonlinear optical properties for the wide bandgap chalcopyrite ternary nitrides

L. C. Tang; Y. C. Chang; J. Y. Huang; C. S. Chang

doi:10.1117/12.791577

25 August 2008 Investigation of the electronic, linear, and second-order nonlinear optical properties for the wide bandgap chalcopyrite ternary nitrides

L. C. Tang, Y. C. Chang, J. Y. Huang, C. S. Chang

Author Affiliations +

Proceedings Volume 7056, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications II; 705605 (2008) https://doi.org/10.1117/12.791577
Event: Photonic Devices + Applications, 2008, San Diego, California, United States

Abstract

We present the results of the ab initio calculated electronic properties, first and second harmonic generation for the A^II B^IV N₂ (A^II=Be, Mg; B^IV =C, Si, Ge) compounds with chalcopyrite structure performed using the Linear Augmented Slater-Type Orbitals (LASTO) method. The second-order optical susceptibilities as functions of frequency for A^II B^IV N₂ are also presented. Specifically, we study the relation between the structural properties and the optical responses. Our electronic band structure and density of states (PDOS) analysis reveal that the underestimate bandgaps of these chalcopyrite AIIBIV N2 are wide enough (from 4eV to 6eV), direct transition and mainly located at Γ-point. Calcultion results show this new category wide-bandgap ternary nitrides has potential applications in optoelectronics.

Citation Download Citation

L. C. Tang, Y. C. Chang, J. Y. Huang, and C. S. Chang "Investigation of the electronic, linear, and second-order nonlinear optical properties for the wide bandgap chalcopyrite ternary nitrides", Proc. SPIE 7056, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications II, 705605 (25 August 2008); https://doi.org/10.1117/12.791577

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