Laser-induced structural, electrical, and optical properties evolution of phase change Ge2Sb2Te5 thin films

Huajun Sun; Lisong Hou; Yiqun Wu

doi:10.1117/12.825762

19 March 2009 Laser-induced structural, electrical, and optical properties evolution of phase change Ge₂Sb₂Te₅ thin films

Huajun Sun, Lisong Hou, Yiqun Wu

Author Affiliations +

Proceedings Volume 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage; 71251U (2009) https://doi.org/10.1117/12.825762
Event: Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 2008, Wuhan, China

Abstract

Sheet resistance of laser-irradiated Ge₂Sb₂Te₅ films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance underwent an abrupt change of four orders of magnitude (10⁷→10³ Ω/sq) at about 580mW , x-ray diffraction studies of the three samples before, at and after the abrupt point revealed the phase change process of the Ge₂Sb₂Te₅ thin films from amorphous to crystal states. Optical constants of the three samples were measured by ellipsometry. Based on the experimental results, the relationship between the electrical / optical properties and the structure of the Ge₂Sb₂Te₅ thin films is discussed and it is shown that optical-electrical hybrid data storage may be realized using optical writing and electrical reading.

Citation Download Citation

Huajun Sun, Lisong Hou, and Yiqun Wu "Laser-induced structural, electrical, and optical properties evolution of phase change Ge₂Sb₂Te₅ thin films", Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71251U (19 March 2009); https://doi.org/10.1117/12.825762

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