Low-cycle fatigue testing of silicon resonators

Pierre-Olivier Theillet; Olivier Pierron

doi:10.1117/12.808180

9 February 2009 Low-cycle fatigue testing of silicon resonators

Pierre-Olivier Theillet, Olivier Pierron

Proceedings Volume 7206, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS and Nanodevices VIII; 72060B (2009) https://doi.org/10.1117/12.808180
Event: SPIE MOEMS-MEMS: Micro- and Nanofabrication, 2009, San Jose, California, United States

Abstract

This paper presents a testing methodology for measuring the low cycle fatigue properties of single-crystal silicon thin films using kHz-frequency resonators. The dynamic behavior of the fatigue structures is thoroughly characterized to allow accurate measurements of stresses (±0.1 GPa) and fatigue lives (±250 cycles). The tests consist of applying successive bursts of small numbers of cycles (as low as ~500 cycles) and measuring the resonant frequency in between each burst. Continuous damage accumulation, beginning after the first burst, is observed based on the decrease in resonant frequency of the resonant structure.

Citation Download Citation

Pierre-Olivier Theillet and Olivier Pierron "Low-cycle fatigue testing of silicon resonators", Proc. SPIE 7206, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS and Nanodevices VIII, 72060B (9 February 2009); https://doi.org/10.1117/12.808180

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