Improved hydrogen detection sensitivity of a Pt/Ga2O3/GaN diode

Jheng-Tai Yan; Chun-Yen Tseng; Chia-Hsun Chen; Ching-Ting Lee

doi:10.1117/12.811004

18 February 2009 Improved hydrogen detection sensitivity of a Pt/Ga₂O₃/GaN diode

Jheng-Tai Yan, Chun-Yen Tseng, Chia-Hsun Chen, Ching-Ting Lee

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 721612 (2009) https://doi.org/10.1117/12.811004
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

The Pt/Ga₂O₃/GaN diodes were fabricated in which the Ga₂O₃ oxide layers were directly grown on GaN layer using a photoelectrochemical method. Then, the Ga₂O₃ oxide films were annealed in O₂ ambiance at 700 °C for 2 hours to perform the β-Ga₂O₃ crystalline phases. The hydrogen sensing characteristics of Pt/GaN (metal-semiconductor, MS) and Pt/β-Ga₂O₃/GaN (metal-insulator-semiconductor, MIS) diodes under hydrogen-containing ambiance were studied in an air atmosphere. Compared with the MS devices, the MIS devices exhibited better hydrogen sensing ability. The result demonstrates that the β-Ga₂O₃ layer plays an important role in the hydrogen sensing of the GaN based MIS diodes.

Citation Download Citation

Jheng-Tai Yan, Chun-Yen Tseng, Chia-Hsun Chen, and Ching-Ting Lee "Improved hydrogen detection sensitivity of a Pt/Ga₂O₃/GaN diode", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721612 (18 February 2009); https://doi.org/10.1117/12.811004

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