Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Bo Xiao; Jinqiao Xie; Vitaliy Avrutin; Qian Fan; Mo Wu; Hadis Morkoç

doi:10.1117/12.811671

19 February 2009 Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Bo Xiao, Jinqiao Xie, Vitaliy Avrutin, Qian Fan, Mo Wu, Hadis Morkoç

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72162M (2009) https://doi.org/10.1117/12.811671
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

The ferroelectric effect has been demonstrated on an AlGaN/GaN heterostructure field effect transistor using a Pb(Zr_0.52Ti_0.48)O₃ layer deposited by radio-frequency magnetron sputtering. The device with a metal-ferroelectric-metal-semiconductor (MFMS) structure was fabricated with a Schottky contact placed between ferroelectric PZT and AlGaN/GaN 2-dimensional electron gas (2DEG) channel. The Schottky contact performs as a bottom electrode of the ferroelectric PZT and also as a barrier layer to prevent interaction at the interface between PZT and GaN. X-ray diffraction revealed the formation of (111)-oriented perovskite phase PZT on gate patterned AlGaN/GaN heterostructures. Transfer characteristics of the double-gate ferroelectric field effect transistor was determined by measuring its source-drain current as the gate bias applied on the top electrode was swept from -15 V to 15 V and then back to -15 V with a voltage step of 0.1 V. Ferroelectric behavior was observed in the plot of source-drain current versus gate voltage that showed a large counterclockwise hysteresis with a 50 % current modulation at zero gate bias.

Citation Download Citation

Bo Xiao, Jinqiao Xie, Vitaliy Avrutin, Qian Fan, Mo Wu, and Hadis Morkoç "Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162M (19 February 2009); https://doi.org/10.1117/12.811671

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