InGaAsP Semiconductor Lasers and LEDs in the 1.2 to 1.6 µm Spectral Region for High-Speed Optical Communications

R. J. Fu; D. J. Bull; C. J. Hwang; C. S. Wang

doi:10.1117/12.937676

14 January 1987 InGaAsP Semiconductor Lasers and LEDs in the 1.2 to 1.6 µm Spectral Region for High-Speed Optical Communications

R. J. Fu, D. J. Bull, C. J. Hwang, C. S. Wang

Author Affiliations +

Proceedings Volume 0722, Components for Fiber Optic Applications; (1987) https://doi.org/10.1117/12.937676
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

The fabrication and performance characteristics of InGaAsP semiconductor diode lasers and LEDs are described. Measured L-I, spectra, far-field angle, small-signal modulation bandwidth, as well as the optical power coupled into multimode and single-mode fibers are presented. Their applications in high-speed optical communications are discussed.

Citation Download Citation

R. J. Fu, D. J. Bull, C. J. Hwang, and C. S. Wang "InGaAsP Semiconductor Lasers and LEDs in the 1.2 to 1.6 µm Spectral Region for High-Speed Optical Communications", Proc. SPIE 0722, Components for Fiber Optic Applications, (14 January 1987); https://doi.org/10.1117/12.937676

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