Paper
26 January 2009 Status of mid-infrared superlattice technology in Germany
Robert Rehm, Martin Walther, Johannes Schmitz, Frank Rutz, Joachim Fleissner, Ralf Scheibner, Johann Ziegler
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Abstract
In Germany, InAs/GaSb superlattice detector technology for the mid-wavelength infrared spectral range has been intensively developed in recent years. Mid-IR InAs/GaSb superlattice photodiodes achieve a very high quantum efficiency. The world's first high-performance infrared imagers based on InAs/GaSb superlattices were realized offering high spatial and excellent thermal resolution at short integration times. Additionally, the technology for dual-color superlattice detectors featuring simultaneous, pixel-registered detection of two separate spectral regimes in the mid-IR has been developed. Due to the ability to detect signatures of hot carbon dioxide, dual-color superlattice detectors are ideally suited for missile alerting sensors. The capability for small volume production of InAs/GaSb superlattice detectors has been established.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Rehm, Martin Walther, Johannes Schmitz, Frank Rutz, Joachim Fleissner, Ralf Scheibner, and Johann Ziegler "Status of mid-infrared superlattice technology in Germany", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220T (26 January 2009); https://doi.org/10.1117/12.809045
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Cited by 14 scholarly publications.
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KEYWORDS
Superlattices

Sensors

Mid-IR

Stereolithography

Quantum efficiency

Semiconducting wafers

Cameras

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