Exposure tool settings and OPC strategies for EUV lithography at the 16-nm node

Yunfei Deng; Jongwook Kye; Bruno La Fontaine; Tom Wallow; Obert Wood; Harry Levinson; Anita Fumar-Pici; Hiroyuki Mizuno; Chiew-seng Koay; Greg McIntyre

doi:10.1117/12.814953

17 March 2009 Exposure tool settings and OPC strategies for EUV lithography at the 16-nm node

Yunfei Deng, Jongwook Kye, Bruno La Fontaine, Tom Wallow, Obert Wood, Harry Levinson, Anita Fumar-Pici, Hiroyuki Mizuno, Chiew-seng Koay, Greg McIntyre

Author Affiliations +

Proceedings Volume 7271, Alternative Lithographic Technologies; 727119 (2009) https://doi.org/10.1117/12.814953
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

The EUV exposure tool settings and OPC strategies to be used for the 16 nm logic node are discussed. Imaging simulation was done for various types of CD through pitch patterns to investigate the tradeoff between NA, illumination settings, and resist diffusion blur. EUV optics still provides very good optical resolution at 56 nm min pitch, but resist diffusion degrades imaging contrast significantly. The CD variations due to resist blur are relatively larger for EUV lithography than they are for 193 nm lithography, because of the high quality of the EUV lithography images. EUV shadowing effect and flare effect contribute additional CD variations, which need to be corrected and controlled. Nonetheless, a resist blur of about 15 nm FWHM or better provides adequate imaging performance even with current EUV optical settings of 0.25 NA and conventional illumination for 28 nm half-pitch applications. Experimental results show that state-of-art EUV resists have resist blur values close to this requirement, although their current performance is limited by resist material properties and processing conditions.

Citation Download Citation

Yunfei Deng, Jongwook Kye, Bruno La Fontaine, Tom Wallow, Obert Wood, Harry Levinson, Anita Fumar-Pici, Hiroyuki Mizuno, Chiew-seng Koay, and Greg McIntyre "Exposure tool settings and OPC strategies for EUV lithography at the 16-nm node", Proc. SPIE 7271, Alternative Lithographic Technologies, 727119 (17 March 2009); https://doi.org/10.1117/12.814953

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available