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MCT was discovered in the UK in 1958. This paper reviews key developments in the research and development of the
material and devices from the early days to the present. The growth of the material by Bridgman, LPE and MOVPE
methods is described. Fabrication techniques are described for SPRITES, two dimensional and long linear "loophole"
diode arrays and the more recent wafer scale technologies for very large arrays. The use of multilayer heterostructures in
Auger-suppressed diodes, two-colour detectors and negative luminescence devices is outlined. A brief glimpse of the
future potential for the growth of MCT directly onto silicon circuits is given.
Tom Elliott
"Recollections of MCT work in the UK at Malvern and Southampton", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72982M (7 May 2009); https://doi.org/10.1117/12.820214
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Tom Elliott, "Recollections of MCT work in the UK at Malvern and Southampton," Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72982M (7 May 2009); https://doi.org/10.1117/12.820214