Paper
19 May 2009 Femtosecond time-resolved differential reflectively measurements in Ga1-xMnxAs epitaxial thin films
G. P. Pepe, C. de Lisio, L. Parlato, V. Pagliarulo, N. Marrocco, C. Zhao, V. Novak, K. Olejnik, M. Cukr, Roman Sobolewski
Author Affiliations +
Abstract
Magnetic semiconductors such as Ga1-xMnxAs have attracted a great interest in the last years due to their high potential as advanced-performance materials in optical detection and in novel spintronic devices. The carrier dynamics and the nonlinear optical response in low-temperature-grown GaAs/Ga1-xMnxAs heterostructures represent an interesting topic much less explored than their electronic transport and/or structural studies. We report our optical investigations of Ga1-xMnxAs films, grown with different Mn concentrations and subject to annealing conditions, by time-resolved, femtosecond pump-probe, differential reflectivity measurements. The analysis of the carrier relaxation times at low temperatures is presented and discussed according to nonequilibrium theories for electron scattering in magnetic materials.
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G. P. Pepe, C. de Lisio, L. Parlato, V. Pagliarulo, N. Marrocco, C. Zhao, V. Novak, K. Olejnik, M. Cukr, and Roman Sobolewski "Femtosecond time-resolved differential reflectively measurements in Ga1-xMnxAs epitaxial thin films", Proc. SPIE 7354, Nonlinear Optics and Applications III, 735411 (19 May 2009); https://doi.org/10.1117/12.823838
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KEYWORDS
Manganese

Scattering

Reflectivity

Annealing

Picosecond phenomena

Femtosecond phenomena

Magnetism

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