Automated insertion of twin gates to improve reliability concerning gate oxide breakdown

Hagen Saemrow; Claas Cornelius; Frank Sill; Andreas Tockhorn; Dirk Timmermann

doi:10.1117/12.821711

28 May 2009 Automated insertion of twin gates to improve reliability concerning gate oxide breakdown

Hagen Saemrow, Claas Cornelius, Frank Sill, Andreas Tockhorn, Dirk Timmermann

Proceedings Volume 7363, VLSI Circuits and Systems IV; 736310 (2009) https://doi.org/10.1117/12.821711
Event: SPIE Europe Microtechnologies for the New Millennium, 2009, Dresden, Germany

Abstract

Scaling device dimensions towards atomic scales leads to increased reliability and yield concerns which considerably affects the work of integrated circuit designers. Furthermore, the complexity of integrated systems increases which leads to a demand for tool assisted reliability insertion during the design process. Lots of research efforts have focused on softerrors and system-level approaches. However, only few low-level solutions have been published to enhance lifetime reliability. Investigations in this field have reached an up to 200 % increased reliability concerning gate oxide breakdown if so called Twin Gates have been inserted. This contribution comprehensively presents algorithms to implement these redundant cells automatically during logic synthesis. Besides the placement in the whole design process, approaches are provided to insert Twin Gates correctly considering timing and area issues.

Citation Download Citation

Hagen Saemrow, Claas Cornelius, Frank Sill, Andreas Tockhorn, and Dirk Timmermann "Automated insertion of twin gates to improve reliability concerning gate oxide breakdown", Proc. SPIE 7363, VLSI Circuits and Systems IV, 736310 (28 May 2009); https://doi.org/10.1117/12.821711

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