Paper
28 August 2009 Mode pattern analysis of gallium nitride-based laser diodes
Xiaomin Jin, Sean Jobe, Simeon Trieu, Benafsh Husain, Jason Flickinger, Bei Zhang, Tao Dai, Xiang-Ning Kang, Guo-Yi Zhang
Author Affiliations +
Proceedings Volume 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging; 73820O (2009) https://doi.org/10.1117/12.834103
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by numerical simulation. Here we discuss three aspects that are crucial to our analysis. First, the transverse mode pattern is studied, and our current GaN diode laser structure is discussed with optical waveguide mode analysis. Then we compare the QW design of the laser and maximize laser modal gain. Finally, we report the influence of the electron block (e-block) layer on lasing performance of our design.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaomin Jin, Sean Jobe, Simeon Trieu, Benafsh Husain, Jason Flickinger, Bei Zhang, Tao Dai, Xiang-Ning Kang, and Guo-Yi Zhang "Mode pattern analysis of gallium nitride-based laser diodes", Proc. SPIE 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, 73820O (28 August 2009); https://doi.org/10.1117/12.834103
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium nitride

Quantum wells

Semiconductor lasers

Cladding

Laser damage threshold

Semiconductors

Waveguides

Back to Top