Paper
29 September 2009 Actinic EUVL mask blank inspection capability with time delay integration mode
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Abstract
We have been developing an actinic full-field mask blank inspection system to detect multilayer phase defects with dark field imaging. Using the current system, we have analyzed the probability of defect detection and occurrence of false defects with variations in defect signal intensity and in background intensity. The result indicates that the size of the smallest defect for 100 % detection with no false defect at full-field inspection is 2.0 nm in height and 78 nm in width. A 100 % detection of smaller defects, 1.5 nm high and 60 nm wide, with no false defect at full-field inspection requires 46 % reduction of the detection threshold. This means that for further improvement of defect sensitivity, a 46 % reduction of CCD noise level, or improvement of the defect detection algorithm, will be required.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Yamane, Toshihiko Tanaka, Tsuneo Terasawa, and Osamu Suga "Actinic EUVL mask blank inspection capability with time delay integration mode", Proc. SPIE 7488, Photomask Technology 2009, 74881B (29 September 2009); https://doi.org/10.1117/12.829724
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Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Inspection

Defect detection

Extreme ultraviolet lithography

Imaging systems

Signal detection

Charge-coupled devices

Defect inspection

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