Influence of PECVD process parameters on the etching Rate of SiN[sub]x[/sub] films

Jun Gou; Zhi-ming Wu; Hui-ling Tai; Kai Yuan

doi:10.1117/12.837860

20 November 2009 Influence of PECVD process parameters on the etching Rate of SiN_x films

Jun Gou, Zhi-ming Wu, Hui-ling Tai, Kai Yuan

Proceedings Volume 7510, 2009 International Conference on Optical Instruments and Technology: MEMS/NEMS Technology and Applications; 75100G (2009) https://doi.org/10.1117/12.837860
Event: International Conference on Optical Instrumentation and Technology, 2009, Shanghai, China

Abstract

Silicon nitride (SiN_x) thin films were deposited by plasma-enhanced chemical vapor deposition (PECVD) with different process parameters (frequency, the ratio of SiH4 to NH₃ gas, and the gas composition), and reactive ion etching (RIE) experiments of these SiN_x thin films were carried out in order to research the relationship between PECVD process parameters and the etching rate (ER). The SiN_x film properties (density, film composition and refractive index), which affected the etching rate, were also studed.

Citation Download Citation

Jun Gou, Zhi-ming Wu, Hui-ling Tai, and Kai Yuan "Influence of PECVD process parameters on the etching Rate of SiN_x films", Proc. SPIE 7510, 2009 International Conference on Optical Instruments and Technology: MEMS/NEMS Technology and Applications, 75100G (20 November 2009); https://doi.org/10.1117/12.837860

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