Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)

Julien Beynet; Patrick Wong; Andy Miller; Sabrina Locorotondo; Diziana Vangoidsenhoven; Tae-Ho Yoon; Marc Demand; Hyung-Sang Park; Tom Vandeweyer; Hessel Sprey; Yong-Min Yoo; Mireille Maenhoudt

doi:10.1117/12.836979

12 December 2009 Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)

Julien Beynet, Patrick Wong, Andy Miller, Sabrina Locorotondo, Diziana Vangoidsenhoven, Tae-Ho Yoon, Marc Demand, Hyung-Sang Park, Tom Vandeweyer, Hessel Sprey, Yong-Min Yoo, Mireille Maenhoudt

Author Affiliations +

Proceedings Volume 7520, Lithography Asia 2009; 75201J (2009) https://doi.org/10.1117/12.836979
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan

Abstract

The inherent advantages of the Plasma-Enhanced Atomic Layer Deposition (PEALD) technology—excellent conformality and within wafer uniformity, no loading effect—overcome the limitations in this domain of the standard PECVD technique for spacer deposition. The low temperature process capability of PEALD silicon oxide enables direct spacer deposition on photoresist, thus suppressing the need of a patterned template hardmask to design the spacers. By decreasing the number of deposition and patterning steps, this so-called Direct Spacer Defined Double Patterning (DSDDP) integration reduces cost and complexity of the conventional SDDP approach. A successful integration is reported for 32 nm half-pitch polysilicon lines. The performances are promising, especially from the lines, which result from the PEALD spacers: Critical Dimension Uniformity (CDU) of 1.3 nm and Line Width Roughness (LWR) of 2.0 nm.

Citation Download Citation

Julien Beynet, Patrick Wong, Andy Miller, Sabrina Locorotondo, Diziana Vangoidsenhoven, Tae-Ho Yoon, Marc Demand, Hyung-Sang Park, Tom Vandeweyer, Hessel Sprey, Yong-Min Yoo, and Mireille Maenhoudt "Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)", Proc. SPIE 7520, Lithography Asia 2009, 75201J (12 December 2009); https://doi.org/10.1117/12.836979

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