Laser microstructuring of sapphire wafer and fiber

Yutang Dai; Gang Xu; Jianlei Cui; Fan Bai

doi:10.1117/12.841098

16 February 2010 Laser microstructuring of sapphire wafer and fiber

Yutang Dai, Gang Xu, Jianlei Cui, Fan Bai

Proceedings Volume 7590, Micromachining and Microfabrication Process Technology XV; 75900O (2010) https://doi.org/10.1117/12.841098
Event: SPIE MOEMS-MEMS, 2010, San Francisco, California, United States

Abstract

Currently, sapphire is widely used in the field of optoelectronic devices and micro-mechanical components. One of the problems in using sapphire is the difficulty in cutting and micro-structuring due to the hardness of sapphire itself. In this paper, laser micromachining characteristics of sapphire are investigated using 157nm DUV laser micro-ablation system. Under laser fluence of 3-4 J/cm², the maximum ablation rate could reach to 400nm/s. For 3D laser ablation, it is necessary to select a proper combination of process parameters. Several 3D micro-structures are produced in sapphire wafers and sapphire fibers. As a whole, the ablation equality is good for use.

Citation Download Citation

Yutang Dai, Gang Xu, Jianlei Cui, and Fan Bai "Laser microstructuring of sapphire wafer and fiber", Proc. SPIE 7590, Micromachining and Microfabrication Process Technology XV, 75900O (16 February 2010); https://doi.org/10.1117/12.841098

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