All optical logic gates using active plasmonic device block

Geum-Yoon Oh; Doo-Gun Kim; Hong-Seung Kim; Young-Wan Choi

doi:10.1117/12.841595

25 February 2010 All optical logic gates using active plasmonic device block

Geum-Yoon Oh, Doo-Gun Kim, Hong-Seung Kim, Young-Wan Choi

Proceedings Volume 7597, Physics and Simulation of Optoelectronic Devices XVIII; 75971U (2010) https://doi.org/10.1117/12.841595
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We have proposed a novel all-optical logic gates based on active plasmonics that may control the electron-photon coupling through an external effect. The phenomenon of surface plasmon resonance (SPR) is basically appeared on attenuated total reflection mirror block. The waveguide-type Kretchmann-Raether configuration with high sensitivity to the metal surface was used for all-optical OR and NAND gates. Here, the double thin metal layers can enhance the confinement of plasmon waves and can be utilized as an output. When the external light source is injected into the thin ZnO film deposited on the facet of a GaAs waveguide, the total refractive index of the thin ZnO layer is changed by the nonlinear refractive index. The proposed waveguide-type configuration was analyzed and optimized using finite-difference time-domain method for all-optical OR and NAND gates. When the external light is injected on the metal layer, the intensity of SPW is decreased by 10.76 dB. However, the reflected light into the waveguide is increased by 2.23 dB.

Citation Download Citation

Geum-Yoon Oh, Doo-Gun Kim, Hong-Seung Kim, and Young-Wan Choi "All optical logic gates using active plasmonic device block", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75971U (25 February 2010); https://doi.org/10.1117/12.841595

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