Paper
25 February 2010 Modeling and simulation of AlGaAs/GaAs QW DBR silicon dual junction photovoltaic devices
Hamid Z. Fardi, Bart Van Zeghbroeck
Author Affiliations +
Abstract
This paper investigates the validation and design of a new high efficiency photovoltaic cell through modeling and simulation. The goal of this article is present the absorption and recombination-generation model of the simulation program for the current-voltage analysis and optimization of MQW's AlGaAs/GaAs solar cells. In an ideal device structure, an efficiency as high as 45% can be achieved by combining a standard silicon single-crystalline cell with a GaAs/AlGaAs multi-QW structure enclosed in a light-confining structure such AlGaAs/GaAs DBR. The predicted efficiency and the analysis is for an ideal crystalline cell, which does not include shadowing effects, reflection and recombination of minority carriers. This combination makes maximum use of the absorption in the silicon and the addition of GaAs QW and selective reflector between the two junction devices boost the efficiency A possible practical design implementation is the use of a transparent contact between the two cells such as ITO and the wafer bonding of the two cells.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hamid Z. Fardi and Bart Van Zeghbroeck "Modeling and simulation of AlGaAs/GaAs QW DBR silicon dual junction photovoltaic devices", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 759723 (25 February 2010); https://doi.org/10.1117/12.842719
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum wells

Silicon

Solar cells

Solar energy

Absorption

Electrons

Modeling and simulation

Back to Top