Paper
23 February 2010 Characterization of ZnO UV photoconductors on the 6H-SiC substrate
Author Affiliations +
Proceedings Volume 7603, Oxide-based Materials and Devices; 76031O (2010) https://doi.org/10.1117/12.843045
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Photoconductors based on wide band gap semiconductors are potential devices for UV light detection due to internal photoelectrical gain and fabrication simplicity. Photoresponses of photoconductors based on GaN and ZnO show high values in UV range under large biases and relatively low values in visible range. Although photoresponse of ZnO photoconductors is similar to that of GaN-based photoconductors, mechanisms of photoconductance between two materials are very different. This difference can be found in optical power dependence of photocurrent and I-V characteristics, and has an impact on device design. In this paper we report experimental studies of photoresponse for newly developed ZnO photoconductors. The ZnO film was grown on a 6H-SiC substrate by hybrid beam deposition. The photoconductor device is formed with interdigitated finger-shaped Ti/Au ohmic contacts on the ZnO film. Electrical characteristics, spectral photoresponse, and persistence properties were studied for the device under variable biases. We find that there are at least three mechanisms involved in the device. At low biases and low incident light power, the photoresponse is mainly due to photocreation. At higher light power and lower biases, the space charge regions are responsible for the photocurrent. At higher biases, the contribution from surface states is dominant.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Linghui Li, Yungryel Ryu, Henry W. White, and Ping Yu "Characterization of ZnO UV photoconductors on the 6H-SiC substrate", Proc. SPIE 7603, Oxide-based Materials and Devices, 76031O (23 February 2010); https://doi.org/10.1117/12.843045
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Zinc oxide

Photoresistors

Ultraviolet radiation

Silicon carbide

Electrons

Photodetectors

Gallium nitride

RELATED CONTENT

Wide bandgap UV photodetectors a short review of devices...
Proceedings of SPIE (February 08 2007)
UV photodetectors based on AlxGa1-xN grown by MOCVD
Proceedings of SPIE (April 12 1996)
AlGaN ultraviolet detectors
Proceedings of SPIE (April 15 1997)
Noises of p-i-n UV photodetectors
Proceedings of SPIE (June 11 2007)
Transient simulation of MSM GaN ultraviolet detector
Proceedings of SPIE (April 17 2001)
Semiconductor ultraviolet detectors
Proceedings of SPIE (April 12 1996)

Back to Top