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We present the results of an optical investigation of a series of Er doped silicon nanocrystal (Si-NC) samples which were
fabricated via ion implantation into SiO2 on sapphire substrates, followed by a range of rapid thermal processing. The
photoluminescence spectra of the Si-NC emission revealed an increase in luminescence intensity and a red-shift of the
peak wavelength as a function of annealing conditions. We attribute the former effect to the reduction of implantation
induced defects with increasing annealing temperature/duration. Measurements of the rate of decay of
photoluminescence intensity at room temperature show a corresponding increase in the carrier lifetimes which is also an
indication of a reduced contribution from non-radiative centers. The red-shift of the peak Si-NC intensity is ascribed to
an increasing mean Si-NC size as a function of the annealing conditions. Also presented is an estimation of the relative
Er sensitization which reveals that the smallest Si-NC size distribution leads to the greatest sensitization ratio. Further
investigation in the form of excitation spectroscopy was used to show that Er ions are sensitized not only by energy
transfer from the Si-NCs, but also, crucially, from defect states in the SiO2.
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N. P. Hylton, I. F. Crowe, A. P. Knights, M. P. Halsall, S. Ruffell, R. M. Gwilliam, "Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO2," Proc. SPIE 7606, Silicon Photonics V, 760604 (16 February 2010); https://doi.org/10.1117/12.852922