Lateral electrical injection into Si/SiO2 horizontal multislot waveguides

Sean P. Anderson; Han G. Yoo; Karl Ni; Philippe M. Fauchet

doi:10.1117/12.843591

16 February 2010 Lateral electrical injection into Si/SiO₂ horizontal multislot waveguides

Sean P. Anderson, Han G. Yoo, Karl Ni, Philippe M. Fauchet

Proceedings Volume 7606, Silicon Photonics V; 760614 (2010) https://doi.org/10.1117/12.843591
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Development of a silicon-based on-chip light source could be facilitated by the incorporation of nanocrystalline silicon (nc-Si) into a multislot waveguide structure, using erbium embedded in silicon oxide as a luminescence source. The multislot waveguide confines TM polarized light in the oxide (low-index) layers, thus reducing the loss caused by interaction with free carriers in the nc-Si layers. Here we demonstrate a lateral electrical injection scheme using a p-i-n junction embedded into the multislot, allowing much more efficient charge injection than alternative vertical injection approaches which have been limited by the highly insulating oxide layers. By exploiting the difference in the mode profiles of TE and TM light, we were able to gauge the injection of free carriers as a function of applied voltage, by measuring the polarization-dependent optical loss for light transmitted through the multislot waveguide. Experimental measurements are well-predicted by numerical computations using both FDTD and the transfer matrix method.

Citation Download Citation

Sean P. Anderson, Han G. Yoo, Karl Ni, and Philippe M. Fauchet "Lateral electrical injection into Si/SiO₂ horizontal multislot waveguides", Proc. SPIE 7606, Silicon Photonics V, 760614 (16 February 2010); https://doi.org/10.1117/12.843591

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