Doping profile effect on picosecond lasing of an internally Q-switched, high-power laser diode

Brigitte Lanz; Sergey Vainshtein; Juha Kostamovaara; Vladimir Lantratov; Nikolay Kalyuzhnyy

doi:10.1117/12.851642

2 December 2009 Doping profile effect on picosecond lasing of an internally Q-switched, high-power laser diode

Brigitte Lanz, Sergey Vainshtein, Juha Kostamovaara, Vladimir Lantratov, Nikolay Kalyuzhnyy

Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 763113 (2009) https://doi.org/10.1117/12.851642
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China

Abstract

The recently demonstrated high-power (50W from a 20μm stripe) picosecond (30ps) lasing from a laser diode has led us to address the internal Q-switching phenomenon, discovered four decades ago and not yet fully understood. We found that the realization of a nanosecond or picosecond mode in a diode depends on the doping profile across the structure.

Citation Download Citation

Brigitte Lanz, Sergey Vainshtein, Juha Kostamovaara, Vladimir Lantratov, and Nikolay Kalyuzhnyy "Doping profile effect on picosecond lasing of an internally Q-switched, high-power laser diode", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 763113 (2 December 2009); https://doi.org/10.1117/12.851642

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available