Paper
20 March 2010 Development of EUV resist for 22nm half pitch and beyond
Ken Maruyama, Makoto Shimizu, Yuuki Hirai, Kouta Nishino, Tooru Kimura, Toshiyuki Kai, Kentaro Goto, Shalini Sharma
Author Affiliations +
Abstract
In order to achieve targeted resist performance for EUV in practical applications, we have developed new materials such as molecular glass (MG), PAG, and acid amplifiers (AA). Protected NORIA, a molecular glass, was examined for extending resolution limits. The resist with protected NORIA showed 22 nm hp resolutions under EUV exposure. PAG acid diffusion effect on LWR was also investigated. It was found that acid diffusion control was one of the most important factors for LWR improvement. To improve sensitivity, application of AA (acid amplifier) was investigated. The resist with AA gained 25% sensitivity improvement over the original formulation. Elemental technologies for major progress of EUV resist were made.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ken Maruyama, Makoto Shimizu, Yuuki Hirai, Kouta Nishino, Tooru Kimura, Toshiyuki Kai, Kentaro Goto, and Shalini Sharma "Development of EUV resist for 22nm half pitch and beyond", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360T (20 March 2010); https://doi.org/10.1117/12.846332
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Cited by 15 scholarly publications and 3 patents.
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KEYWORDS
Diffusion

Line width roughness

Extreme ultraviolet

Extreme ultraviolet lithography

Glasses

Lithography

Amplifiers

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